Name: in depth analyses of leds by a combination of x-ray computed tomography (ct) and light microscopy (lm) correlated with scanning electron microscopy (sem)
Uploaded: 2016-06-16T13:00:00.000+00:00
Duration: 10 min 42 s
Description: Watch this Scientific Journal Video about In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM at JoVE.co

作者好心承认从"Akademische GESELLSCHAFT利普施塔特"，以及从"Ministerium献给创新，Wissenschaft与研究部des Landes酒店北威州的"金融支持。照片在图1，图2和5礼貌马库斯HORSTMANN，应用科学哈姆 - 利普施塔特大学。

1.样品制备X射线计算机断层扫描（CT） <ol><li>胶样品（LED 参见材料节）使用热熔粘合剂适当长度的2毫米直径的中空碳纤维条。 </li><li>通过如果需要，用热风枪调整试样位置。使用三爪卡盘固定在CT-样品室中的样品。 </li></ol> 2. CT测量设置<ol><li>根据X射线管的控制软件进行升温和定心程序。 注意:制造商的CT和由供应商（ 参见材料节）指定的标准协议的使用管的控制软件。 </li><li>校准光束，并且使用的数据采集软件，如在材料部分中指定检测器。确定暗电流和调整偏移和根据由制造商（ 参见材料节）提供的标准程序检测器的增益。 </li><li>调整成像PARAMETERS。对于这里显示的效果，请使用以下调整:将图像放大至36.37，设定体素尺寸为1.37微米，图像的设置数量为1800（每360度），设置成像时间为500毫秒，平均图像的设置数量为3和跳帧1，设置的图像大小为2284点¯x2,304像素的数量。 </li><li>调整测量参数。对于所示的结果用下面的调整:将焦点对象的距离（FOD）至5.5毫米，设置焦点检测器的距离（FDD）至200毫米，设置X射线管电压为100千伏和管电流135微安，使用0.2毫米铜箔的束硬化。 </li></ol> 3，CT扫描性能注:X射线强度可以在测量过程中变化。为了补偿这些最终波动，利息率（ROI）窗口的一个区域被放置在X射线不会与样品干扰。该区域不受通过样品的X射线的吸收，因此它是具有最高测量的强度的区域。 <ol><li>通过确定一个完整旋转过程中不受被测物体遮挡的区域选择的投资回报率。在与实时图像，按下测量窗口，按住鼠标左键，并绘制了一个红色的框架窗口。 </li><li>右击该窗口的框架上打开上下文菜单。然后选择" 设置为观察窗口 "。该框架的颜色将变为黄色，而观察窗口将被固定在测量窗口。 注意:使用此软件的功能，因此设置的观察窗，并限定在扫描的图像，其中该X射线不与样品相互作用的区域。这是纠正的光线，这直接击中探测器灰度值的可能漂移（无射线，造成空气的灰度值）。它是样本的完整旋转期间在图像中最亮的区域。 注意:由于该事实，即X射线管的加热将导致管的材料的热膨胀，一个软件模块被激活校正这样的效果。这些效应导致在目标上的X射线焦点偏移，以及在空间上，其中在测量期间将导致所记录的图像所测量的对象的运动。 <ol><li>激活软件模块" 自动扫描优化 "，通过其中9个图像样本的实际扫描之前进行。这些图像拍摄于40℃的步骤，而转动样品。 注:此软件模块将除了热效应的修正也允许样品本身的较小机械运动的校正。模块在测量软件的图形用户界面中。 </li><li>此外激活模块" 探测器移例行程序 "。这两个模块开始实际CT扫描之前， 同时激活确保校正样品的运动和环文物。 注意:这个软件模块用于减少环状伪影:该检测器移动到一个位置约 ±从初始位置10像素和拍摄的所有图像被平均化。这减少了影响故障象素。 </li><li>使用该采集软件的" 自动扫描优化 "和" 检测器移例行程序 "用于上述目的，两个模块可以分别选择，并在此调查同时使用。 </li></ol></li><li>通过启动在采集软件的" 数据采集程序 "扫描样本。 </li></ol> 4.重建卷的信息，微制备规划<ol><li>使用制造商的重建软件渲染卷信息。体绘制进行数字使用计算集群重建由X射线吸收呈现的样品的特性。 </li><li>应用图像校正算法:六六六+（束硬化校正）申请"不同的材料"（这是5.8），以消除束硬化和扫描优化删除不需要的样品运动参见 3.2）的值。进行这些步骤出根据供应商的软件使用手册（ 参见材料部分）。 </li><li>选择用于重建的区域，并定义感兴趣区域（ROI）的区域。在此情况下，ROI是通过其旋转在CT样品室中描述了一整圈时该LED占据的体积限定。利用软件选项" 使用观察 "和" 投资回报率CT-过滤器 "，以抑制文物，坚持供应商的软件使用手册（ 参见材料部分），这样做的时候。 </li><li>对于重建ROI的体积。在重建软件设定的ROI，过滤器和校正选项之后，如由仪器的供应商指定的执行使用计算群集的容积重建（参见材料部分）。 </li><li>转移重建数据来对CT-数据分析软件，在XY对准样品，使用该软件的" 简单的注册 "功能XZ和YZ平面。应用" 中间 "的过滤，使用滤镜尺寸"3"。 注:进如在软件手册中描述了以下步骤（ 参见材料部分）。 <ol><li>使用该软件，检查所呈现量，并为您在设备结构电气互连，以保证光线的顶部发光半导体芯片由焊垫的设备下的电流供应。 </li><li>定义切割位置和样品量被删除通过研磨和抛光为随后的微制剂，如剥离后设备依然运行（免开电路）。使用该软件的距离和测量工具，以确保SPECIM的可操作性烯后微制剂（长度可以由1毫米×1毫米的公知的LED芯片的尺寸进行校准）。 </li></ol></li></ol> 5.微准备<ol><li>焊接银线手动所述LED的阳极和阴极垫。使用直径为1mm，并用该组合物的60％的Sn，39％Pb和1％的Cu焊料丝。确保电线的适当定位。 </li><li>采用透明的支持在环氧树脂中嵌入的LED（ 例如 ，25毫米或40毫米直径环）。钻在载体的相反侧上的两个小孔和饲料银线（其接触LED）通过它。位置通过拧紧或拧松银线对齐LED和支持体的前边缘的装置的LED。 <ol><li>填有硅烧杯内环氧环预处理，以确保它不会粘到环氧和随后让环氧树脂变硬。 </li></ol></li><li>利用体视显微镜，视觉上确保支持和LED对齐。 MECHANICALLý除去任何树脂，其是在过量（ 例如 ，支持体以外），通过用粗砂纸打磨。 </li><li>固定在LED（嵌入在环氧树脂），以平面的方式向样本保持器，用于精密磨削。 </li><li>使用带有磨损的测量研磨机和从目标飞机的位置取出样品表面到100微米。 </li><li>小心使用9微米金刚石悬浮液手动操作的研磨机去除更多的材料。用立体显微镜控制磨损的进展频繁。 </li><li>在到达目标区域，如通过CT扫描的定义，切换至3μm金刚石悬浮液和最终合适的抛光悬浮液，通过改变所使用的手动磨床的相应研磨和抛光盘。控制与立体显微镜在很短的间隔进度。 注:在理想情况下所制备的表面现在将对应于在CT测量所限定的目标平面。 </li><li>在步骤5。5和5.6总是除去研磨和通过用去离子水漂洗并用棉纤维垫擦拭使用显微镜之前抛光悬浮液。 </li><li>抛光后，观察光滑，使用立体显微镜划伤的表面上。清洁，用去离子水和棉纤维垫的试样，并且通过使用吹风机用乙醇（纯甲基化酒精）冲洗并干燥除去水。 </li><li>检查试样用于电的可操作性， 即 ，电流流过发光正向二极管和以相反的方向上没有电流流过，使用数字万用表。 </li></ol> 6. LM测量设置<ol><li>摩标本适当的样品持有人CLEM（ 参见材料部分）。确保样品架固定在LM，溅射镀膜机和扫描电镜使用的样本。 </li><li>调节校准标记（ 在支架的L-结构 ），以相同的高度样品表面（ 约 4毫米&lt;/ STRONG&gt;）。确保该研磨面是平行于LM的焦平面。固定样品架到LM的电动XY阶段。 LED连接到电源。该电源应该恒流模式。 </li><li>通过保存作为参考点的校准标记的位置校准在xy阶段样本保持器的位置。 注:此步骤包括在用户手册中描述半自动过程（ 参见材料部分）的详细说明。 </li></ol> 7. LM表征<ol><li>移动的LM XY阶段使得样品的投资回报率是在视LM的领域。确保LM相机具有通过自动校准精确的白平衡作为LM-软件和使用白色参考表面提供（如纸上）。 </li><li>在的化合物的LM执行LM成像根据由供应商（ 参见材料所提供的用户手册中所述的步骤的反射光secti上）。对于这里示出的结果的明场，暗场和偏振对比度用一个50X物镜成像。 </li><li>开关上的电源和调LED发射。关闭LM照明和调整LM相机（ 约 92毫秒取决于排放强度）的曝光时间。获取样品（发光对比度）内的光分布的LM形象。 </li><li>如果适用，通过激活LM照明和LED同时对比其他图像发光在一起。 注:否则，用不同的对比度的图像也可以通过以后的图像处理的装置进行混合。 </li><li>与在由供应商（ 参见材料部分）提供的用户手册中描述的相应的舞台上的地位一起保存所有LM的图像。 </li></ol> 8.溅射镀膜<ol><li>从LM和电源取出样品架。确保样品保持稳定地固定在保持器内。 </li><li>修复铜CONDuctive磁带上围绕LED的抛光样品表面和样品架接触。切勿用磁带的投资回报。 </li><li>用箔覆盖样品座，并准备类似于样品直径（ 约 5毫米）的一个窗口。固定在箔内彻底样本保持器，使得所述窗口是直接在样品上方。 </li><li>样品架放入溅射镀膜机确保样品表面能够涂的接收者。溅射一个5nm厚的碳层到所述样品表面（从碳棒）。移动样品架从溅射镀膜机的并取出箔。 </li></ol> 9. SEM测量设置<ol><li>安装样品架到SEM适配器，并将其放置在SEM的机动阶段。泵真空室。 </li><li>通过保存作为参考点的校准标记的位置校准的SEM内样品保持器的位置。 注:此步骤包括半自动P A详细说明rocedure在用户手册（ 参见材料节）中所述。 </li><li>定义坐标从LM改造SEM阶段的投资回报直接搬迁，为LM图像中导航。此步骤也可以自动通过软件在用户手册（ 参见材料节）中描述的进行。 </li></ol> 10. SEM分析<ol><li>移动舞台上显示样品ROI和在相同的位置在LM进行SEM分析。 </li><li>选择面成像"SE检测 "。选择20千电子伏的电子能量，设定光圈30微米，在8.7毫米的工作距离的样本位置。 </li><li>选择材质对比" 疯牛病检测 "。选择20千电子伏的电子能量，设定光圈30微米，在8.7毫米的工作距离的样本位置。 </li><li>选择元素映射"EDX检测 "。选择20千电子伏的电子能量，设定光圈60微米，并在9毫米的工作距离的样本位置。检测下列元素:Y，铝，钙，硅，镓，金，镍和铜。 </li></ol> 11.图像处理<ol><li>通过在从LM和SEM图像和由另外的图像的处理中由供应商（ 参见材料节）所提供的用户手册中所述选择相同点执行LM和SEM图像的叠加。 </li></ol>

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The authors have nothing to disclose.

这种多峰方法的优点包括在所获取的数据的位置相关的相关性。这里所描述的多模式应与每个单独的技术后续分析进行对比。例如，在LM可见发光特性可以为使用SEM / EDS检测挂成分。经CT获得的卷信息可以在以靶向方式制备横截面的深度分析进行扩展。 CT数据还使得能够在随后显微镜调查兴趣可能领域快速定位。此处所描述的方法是最后的几个技术，这使光学性质的微结构，甚至到亚微米结构细节...

本文演示X射线计算机断层扫描（CT）与相关的光，并在发光二极管（LED）的深度表征示例性电子显微镜（CLEM）的组合的潜力和优势。使用这种技术，可以计划以这样的方式，当一个横截面可以用显微镜成像的电功能是在检体的其余部分保留了微制备的LED。该过程有几个独特的功能:一是规划编制微通过CT获得整个样本的渲染量的援助;其次，通过光学显微镜（LM）具有完整各种可用的成像技术（亮和暗场，偏振对比度等 ）的LED的观察;第三，在LM操作中LED的观察;第四，同一区域的充分各种各样的电子显微成像技术观察，包括备用电子lectron（SE）和背散射电子（BSE）的成像，以及能量色散X射线荧光光谱法（EDX）。 对于照明应用的LED被设计为发射白光，虽然在某些应用中的颜色变化可能是有利的。这个宽的发射不能由发射从一个化合物半导体来实现，由于LED在窄光谱带（ 大约 30纳米半峰全宽（FWHM））发射辐射。因此白色LED灯通常是由组合的蓝色LED与该短波长辐射转化成宽发射过大的光谱范围为1荧光体产生的。颜色可变的LED解决方案通常使用至少三种原色，这通常导致更高的市场价格。2 使用哪种CT，LM或者SEM的，当然是完善的（ 例如 ，在故障分析LED的3 - 15），然而，这里描述的所有三种技术全面和有针对性的组合可以提供新的见解，将使朝着有意义的表征结果更快的轨道。 从在CT感兴趣的区域（投资回报）​​可以识别和选择的封装器件的三维微观结构分析。与此非破坏性方法，电连接也可以识别并考虑用于进一步制备。二维横截面的确切制剂允许在操作所述装置的调查，尽管该方法的破坏性。横截面，现在可以通过CLEM 16,17使相同ROI的一个非常有效的，灵活的表征与LM以及扫描电镜来表征。通过这种方法，既显微技术的优点可以被组合。例如，感兴趣区在LM的快速识别后跟在SEM高分辨率成像。但此外，信息从相关将LM（ 例如 ，颜色，光学性质，粒度分布）利用SEM的可视化和分析技术（ 例如 ，颗粒大小，表面形貌，元素分布）允许的功能行为和显微白色LED内的更深的理解。

<table><tbody><tr><td>X-ray Computer Tomograph</td><td>General Electric</td><td>not applicable</td><td>type: nanotom s research edition</td></tr><tr><td>acquisition software</td><td>General Electric</td><td>not applicable</td><td>phoenix Datos| x2 acquisition and corresponding manual</td></tr><tr><td>reconstruction software</td><td>General Electric</td><td>not applicable</td><td>phoenix Datos| x2 acquisition and corresponding manual</td></tr><tr><td>rendering software</td><td>Volume Graphics</td><td>not applicable</td><td>VGStudio Max 2.2 and corresponding manual</td></tr><tr><td>grinder (manual)</td><td>Struers</td><td>5296327</td><td>Labopol 21</td></tr><tr><td>sample holder</td><td>Struers</td><td>4886102</td><td>UniForce</td></tr><tr><td>grinder (automated)</td><td>Struers</td><td>6026127</td><td>Tegramin 25</td></tr><tr><td>epoxy resin/hardener</td><td>Struers</td><td>40200030/40200031</td><td>Epoxy fix resin / Epoxy fix hardener</td></tr><tr><td>Ethanol</td><td>Struers</td><td>950301</td><td>Kleenol</td></tr><tr><td>Light Microscope</td><td>Zeiss</td><td>not applicable</td><td>Axio Imager M2m&amp;nbsp;</td></tr><tr><td>Electron Microscope</td><td>Zeiss</td><td>not applicable</td><td>Sigma&amp;nbsp;</td></tr><tr><td>CLEM software</td><td>Zeiss</td><td>not applicable</td><td>Axio Vision SE64 Rel.4.9 and corresponding manual</td></tr><tr><td>CLEM sample holder</td><td>Zeiss</td><td>432335-9101-000</td><td>Specimen holder CorrMic MAT Universal B</td></tr><tr><td>SEM Adapter for CLEM sample holder</td><td>Zeiss</td><td>432335-9151-000</td><td>SEM Adapter for Specimen holder CorrMic MAT Universal B</td></tr><tr><td>sputter coater</td><td>Quorum</td><td>not applicable</td><td>Q150TES</td></tr><tr><td>EDS detector</td><td>R&amp;ouml;ntec</td><td>not applicable</td><td>X-Flash 1106</td></tr><tr><td>solder</td><td>Stannol</td><td>535251</td><td>type: HS10</td></tr><tr><td>LED</td><td>Lumileds</td><td>not applicable</td><td>LUXEON Rebel warm white, research sample</td></tr></tbody></table>

in depth analyses of leds by a combination of x-ray computed tomography (ct) and light microscopy (lm) correlated with scanning electron microscopy (sem)

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of micro-characterization, plays an important role. Commonly, different techniques like X-ray computed tomography (CT), light microscopy (LM) and scanning electron microscopy (SEM) are used separately. Similarly, the results have to be treated for each technique independently. Here a comprehensive study is shown which demonstrates the potentials leveraged by linking CT, LM and SEM. In depth characterization is performed on a white emitting LED, which can be operated throughout all characterization steps. Major advantages are: planned preparation of defined cross sections, correlation of optical properties to structural and compositional information, as well as reliable identification of different functional regions. This results from the breadth of information available from identical regions of interest (ROIs): polarization contrast, bright and dark-field LM images, as well as optical images of the LED cross section in operation. This is supplemented by SEM imaging techniques and micro-analysis using energy dispersive X-ray spectroscopy.

的特征在于LED被示出在图1中，它是发光LED具有1×1 mm 2的芯片尺寸和部分陶瓷发光颜色转换为白色。胶合LED在稍微倾斜的位置上的碳纤维条避免引起样品对称性的CT伪影（ 图2）。在CT测量的结果允许规划样品的横截面的位置，并确保局部磨损（ 图3和图4）后的电可操作性。所呈现的体积允许将功能结构，尤其是容?...

Watch this Scientific Journal Video about In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM at JoVE.co

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

一种有源光器件的全面的微特征的工作流程概述。它包含CT，LM和扫描电镜结构以及功能调查。该方法被证明为白色LED可仍然表征期间进行操作。

在通过X射线计算机断层扫描（CT）和与扫描电子显微镜相关光学显微镜（LM）的一个组合的LED深度分析（SEM）的

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of ...

in-depth-analyses-leds-combination-x-ray-computed-tomography-ct-light

Universidad San Sebastian

Research

JoVE Journal

Engineering

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)

9.2K 次观看.  Hamm-Lippstadt University of Applied Sciences. 一种有源光器件的全面的微特征的工作流程概述。它包含CT，LM和扫描电镜结构以及功能调查。该方法被证明为白色LED可仍然表征期间进行操作。 

视频: In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Preparing Adherent Cells for X-ray Fluorescence Imaging by Chemical Fixation

X-ray fluorescence imaging allows us to non-destructively measure the spatial distribution and concentration of multiple elements simultaneously over large or small sample areas. It has been applied in many areas of science, including materials science, geoscience, studying works of cultural heritage, and in chemical biology. In the case of chemical biology, for example, visualizing the metal distributions within cells allows us to study both naturally-occurring metal ions in the cells, as well as exogenously-introduced metals such as drugs and nanoparticles. Due to the fully hydrated nature of nearly all biological samples, cryo-fixation followed by imaging under cryogenic temperature represents the ideal imaging modality currently available. However, under the circumstances that such a combination is not easily accessible or practical, aldehyde based chemical fixation remains useful and sometimes inevitable. This article describes in as much detail as possible in the preparation of adherent mammalian cells by chemical fixation for X-ray fluorescent imaging.

Here, we present a protocol on how to determine the quantity and distribution of metals in a sample using synchrotron X-ray fluorescence. We focus on adherent cells, and describe the chemical fixation method to prepare this sample. We then describe how to mount and image the sample using synchrotron X-rays.

化学固定准备贴壁细胞的X射线荧光成像

X-ray fluorescence imaging allows us to non-destructively measure the spatial distribution and concentration of multiple elements simultaneously over ...

科研

化学

Energy Dispersive X-ray Tomography for 3D Elemental Mapping of Individual Nanoparticles

Energy dispersive X-ray spectroscopy within the scanning transmission electron microscope (STEM) provides accurate elemental analysis with high spatial resolution, and is even capable of providing atomically resolved elemental maps. In this technique, a highly focused electron beam is incident upon a thin sample and the energy of emitted X-rays is measured in order to determine the atomic species of material within the beam path. This elementally sensitive spectroscopy technique can be extended to three dimensional tomographic imaging by acquiring multiple spectrum images with the sample tilted along an axis perpendicular to the electron beam direction.
Elemental distributions within single nanoparticles are often important for determining their optical, catalytic and magnetic properties. Techniques such as X-ray tomography and slice and view energy dispersive X-ray mapping in the scanning electron microscope provide elementally sensitive three dimensional imaging but are typically limited to spatial resolutions of &gt; 20 nm. Atom probe tomography provides near atomic resolution but preparing nanoparticle samples for atom probe analysis is often challenging. Thus, elementally sensitive techniques applied within the scanning transmission electron microscope are uniquely placed to study elemental distributions within nanoparticles of dimensions 10-100 nm.
Here, energy dispersive X-ray (EDX) spectroscopy within the STEM is applied to investigate the distribution of elements in single AgAu nanoparticles. The surface segregation of both Ag and Au, at different nanoparticle compositions, has been observed.

The use of energy dispersive X-ray tomography in the scanning transmission electron microscope to characterize elemental distributions within single nanoparticles in three dimensions is described.

能量色散X射线断层摄影术对个人纳米3D元素映射

Energy dispersive X-ray spectroscopy within the scanning transmission electron microscope (STEM) provides accurate elemental analysis with high spatial ...

工程学

Failure Analysis of Batteries Using Synchrotron-based Hard X-ray Microtomography

Imaging morphological changes that occur during the lifetime of rechargeable batteries is necessary to understand how these devices fail. Since the advent of lithium-ion batteries, researchers have known that the lithium metal anode has the highest theoretical energy density of any anode material. However, rechargeable batteries containing a lithium metal anode are not widely used in consumer products because the growth of lithium dendrites from the anode upon charging of the battery causes premature cell failure by short circuit. Lithium dendrites can also form in commercial lithium-ion batteries with graphite anodes if they are improperly charged. We demonstrate that lithium dendrite growth can be studied using synchrotron-based hard X-ray microtomography. This non-destructive imaging technique allows researchers to study the growth of lithium dendrites, in addition to other morphological changes inside batteries, and subsequently develop methods to extend battery life.

Synchrotron-based hard X-ray microtomography is used to image the electrochemical growth of dendrites from a lithium metal electrode through a solid polymer electrolyte membrane.

电池的使用同步为基础的硬X射线微断层故障分析

Imaging morphological changes that occur during the lifetime of rechargeable batteries is necessary to understand how these devices fail. Since the advent ...

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Synchrotron radiation micro-tomography (SR&#181;T) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm2, but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample&#39;s properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 &#181;m all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

For this study synchrotron radiation micro-tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron&#39;s high flux and brightness the sample was imaged in just 3 min&#160;with an 8.7 &#181;m spatial resolution.

利用同步辐射微断层调查的多尺度三维微电子封装

Synchrotron radiation micro-tomography (SR&#181;T) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data ...

Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors

Nitride and oxynitride (Sialon) phosphors are good candidates for the ultraviolet and visible emission applications. High performance, good stability and flexibility of their emission properties can be achieved by controlling their composition and dopants. However, a lot of work is still required to improve their properties and to reduce the production cost. A possible approach is to correlate the luminescence properties of the Sialon particles with their local structural and chemical environment in order to optimize their growth parameters and find novel phosphors. For such a purpose, the low-voltage cathodoluminescence (CL) microscopy is a powerful technique. The use of electron as an excitation source allows detecting most of the luminescence centers, revealing their luminescence distribution spatially and in depth, directly comparing CL results with the other electron-based techniques, and investigating the stability of their luminescence properties under stress. Such advantages for phosphors characterization will be highlighted through examples of investigation on several Sialon phosphors by low-energy CL.

Low-energy Cathodoluminescence for OxyNitride Phosphors

An excellent chemical and luminescence stabilities of (oxy)nitride phosphors present it as an promising alternative to currently used sulfide and oxide phosphors. In this paper, we present the way to investigate its local luminescence properties using low-energy cathodoluminescence (CL).

低能量的阴极射线（氧）氮化物荧光粉

Nitride and oxynitride (Sialon) phosphors are good candidates for the ultraviolet and visible emission applications. High performance, good stability and ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples

In this report, we describe a detailed procedure for acquiring and processing&#160;x-ray microfluorescence (&#956;XRF), and Laue and powder microdiffraction two-dimensional (2D) maps at beamline 12.3.2 of the Advanced Light Source (ALS), Lawrence Berkeley National Laboratory. Measurements can be performed on any sample that is less than 10 cm x 10 cm x 5 cm, with a flat exposed surface. The experimental geometry is calibrated using standard materials (elemental standards for XRF, and crystalline samples such as Si, quartz, or Al2O3 for diffraction). Samples are aligned to the focal point of the x-ray microbeam, and raster scans are performed, where each pixel of a map corresponds to one measurement, e.g., one XRF spectrum or one diffraction pattern. The data are then processed using the in-house developed software XMAS, which outputs text files, where each row corresponds to a pixel position. Representative data from moissanite and an olive snail shell are presented to demonstrate data quality, collection, and analysis strategies.

We describe a beamline setup meant to carry out rapid two-dimensional x-ray fluorescence and x-ray microdiffraction mapping of single crystal or powder samples using either Laue (polychromatic radiation) or powder (monochromatic radiation) diffraction. The resulting maps give information about strain, orientation, phase distribution, and plastic deformation.

矿物和岩石样品的同步辐射 x 射线 Microdiffraction 和荧光成像

In this report, we describe a detailed procedure for acquiring and processing&#160;x-ray microfluorescence (&#956;XRF), and Laue and powder ...

高通量树木年轮分析和密度估计

Tree Core Analysis with X-ray Computed Tomography

An X-ray computed tomography (CT) toolchain is presented to obtain tree-ring width (TRW), maximum latewood density (MXD), other density parameters, and quantitative wood anatomy (QWA) data without the need for labor-intensive surface treatment or any physical sample preparation. The focus here is on increment cores and scanning procedures at resolutions ranging from 60 &#181;m down to 4 &#181;m. Three scales are defined at which wood should be looked at: (i) inter-ring scale, (ii) ring scale, i.e., tree-ring analysis and densitometry scale, as well as (iii) anatomical scale, the latter approaching the conventional thin-section quality. Custom-designed sample holders for each of these scales enable high-throughput scanning of multiple increment cores. A series of software routines were specifically developed to efficiently treat three-dimensional X-ray CT images of the tree cores for TRW and densitometry. This work briefly explains the basic principles of CT, which are needed for a proper understanding of the protocol. The protocol is presented for some known species that are commonly used in dendrochronology. The combination of rough density estimates, TRW and MXD data, as well as quantitative anatomy data, allows us to broaden and deepen current analyses for climate reconstructions or tree response, as well as further develop the field of dendroecology/climatology and archeology.

作者聚焦：用于树芯分析的 X 射线 CT 工具链的进步

Here we show how to process tree cores with an X-ray computed tomography toolchain. Except for chemical extraction for some purposes, no further physical lab treatment is needed. The toolchain can be used for biomass estimations, for obtaining MXD/tree-ring width data as well as for obtaining quantitative wood anatomy data.

使用 X 射线计算机断层扫描进行树芯分析

An X-ray computed tomography (CT) toolchain is presented to obtain tree-ring width (TRW), maximum latewood density (MXD), other density parameters, and ...

在通过X射线计算机断层扫描（CT）和与扫描电子显微镜相关光学显微镜（LM）的一个组合的LED深度分析（SEM）的

摘要

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此视频中的章节

化学固定准备贴壁细胞的X射线荧光成像

能量色散X射线断层摄影术对个人纳米3D元素映射

电池的使用同步为基础的硬X射线微断层故障分析

利用同步辐射微断层调查的多尺度三维微电子封装

低能量的阴极射线（氧）氮化物荧光粉

通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征

矿物和岩石样品的同步辐射 x 射线 Microdiffraction 和荧光成像

使用 X 射线计算机断层扫描进行树芯分析

使用 X 射线计算机断层扫描进行树芯分析

使用 X 射线计算机断层扫描进行树芯分析