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Chapter 10

Basics of Semiconductors

반도체의 기초
반도체의 기초
Solids are composed of atoms with distinct electronic configurations and energy levels. When two identical isolated atoms are brought close together, ...
반도체의 기초
반도체의 기초
Materials are broadly categorized into three types as metals, insulators, and semiconductors. Metals have no energy band gap due to the overlap of the ...
반도체의 기초
반도체의 기초
A pure silicon wafer used in integrated circuits is an intrinsic semiconductor that lacks impurities and exhibits low electrical conductivity. At zero ...
반도체의 기초
반도체의 기초
Carrier generation refers to the creation of electron-hole pairs. Band-to-band generation occurs in direct band gap semiconductors via thermal excitation ...
반도체의 기초
반도체의 기초
Carrier transport in semiconductors generates current, through drift and diffusion mechanisms. Drift current arises when an external electric field causes ...
반도체의 기초
반도체의 기초
Solar streetlights function independently without the requirement of an external power supply, as they contain p-n junctions within their solar cells. A ...
P-N 접합의 바이어싱
P-N 접합의 바이어싱
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium. In equilibrium, no ...
금속-반도체 접합
금속-반도체 접합
Contact between a Metal and a semiconductor forms a junction with either Schottky or Ohmic behavior. If the metal's work function exceeds that of the ...
금속-반도체 접합의 바이어싱
금속-반도체 접합의 바이어싱
Biasing metal and n-type semiconductor junctions involves applying a voltage to metal while grounding the semiconductor. The resulting current is positive ...
페르미 레벨
페르미 레벨
The Fermi-Dirac function, represented by a sigmoid curve, indicates the probability of an energy state being occupied by an electron at a given ...
페르미 준위 역학
페르미 준위 역학
The vacuum level represents the energy threshold for an electron to escape a material's surface. It typically lies above a semiconductor's ...
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