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Chapter 10

Basics of Semiconductors

Grundlagen der Halbleitertechnik
Grundlagen der Halbleitertechnik
Solids are composed of atoms with distinct electronic configurations and energy levels. When two identical isolated atoms are brought close together, ...
Grundlagen der Halbleiter
Grundlagen der Halbleiter
Materials are broadly categorized into three types as metals, insulators, and semiconductors. Metals have no energy band gap due to the overlap of the ...
Grundlagen der Halbleiter
Grundlagen der Halbleiter
A pure silicon wafer used in integrated circuits is an intrinsic semiconductor that lacks impurities and exhibits low electrical conductivity. At zero ...
Grundlagen der Halbleiter
Grundlagen der Halbleiter
Carrier generation refers to the creation of electron-hole pairs. Band-to-band generation occurs in direct band gap semiconductors via thermal excitation ...
Grundlagen der Halbleiter
Grundlagen der Halbleiter
Carrier transport in semiconductors generates current, through drift and diffusion mechanisms. Drift current arises when an external electric field causes ...
Grundlagen der Halbleitertechnik
Grundlagen der Halbleitertechnik
Solar streetlights function independently without the requirement of an external power supply, as they contain p-n junctions within their solar cells. A ...
Vorspannung des P-N-Übergangs
Vorspannung des P-N-Übergangs
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium. In equilibrium, no ...
Metall-Halbleiter-Übergänge
Metall-Halbleiter-Übergänge
Contact between a Metal and a semiconductor forms a junction with either Schottky or Ohmic behavior. If the metal's work function exceeds that of the ...
Vorspannung von Metall-Halbleiter-Übergängen
Vorspannung von Metall-Halbleiter-Übergängen
Biasing metal and n-type semiconductor junctions involves applying a voltage to metal while grounding the semiconductor. The resulting current is positive ...
Fermi-Niveau
Fermi-Niveau
The Fermi-Dirac function, represented by a sigmoid curve, indicates the probability of an energy state being occupied by an electron at a given ...
Dynamik des Fermi-Niveaus
Dynamik des Fermi-Niveaus
The vacuum level represents the energy threshold for an electron to escape a material's surface. It typically lies above a semiconductor's ...
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