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Chapter 10

Basics of Semiconductors

半导体基础知识
半导体基础知识
Solids are composed of atoms with distinct electronic configurations and energy levels. When two identical isolated atoms are brought close together, ...
半导体基础知识
半导体基础知识
Materials are broadly categorized into three types as metals, insulators, and semiconductors. Metals have no energy band gap due to the overlap of the ...
半导体基础知识
半导体基础知识
A pure silicon wafer used in integrated circuits is an intrinsic semiconductor that lacks impurities and exhibits low electrical conductivity. At zero ...
半导体基础知识
半导体基础知识
Carrier generation refers to the creation of electron-hole pairs. Band-to-band generation occurs in direct band gap semiconductors via thermal excitation ...
半导体基础知识
半导体基础知识
Carrier transport in semiconductors generates current, through drift and diffusion mechanisms. Drift current arises when an external electric field causes ...
半导体基础知识
半导体基础知识
Solar streetlights function independently without the requirement of an external power supply, as they contain p-n junctions within their solar cells. A ...
P-N 结的偏置
P-N 结的偏置
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium. In equilibrium, no ...
金属-半导体结
金属-半导体结
Contact between a Metal and a semiconductor forms a junction with either Schottky or Ohmic behavior. If the metal's work function exceeds that of the ...
金属-半导体结的偏置
金属-半导体结的偏置
Biasing metal and n-type semiconductor junctions involves applying a voltage to metal while grounding the semiconductor. The resulting current is positive ...
费米能级
费米能级
The Fermi-Dirac function, represented by a sigmoid curve, indicates the probability of an energy state being occupied by an electron at a given ...
费米能级动力学
费米能级动力学
The vacuum level represents the energy threshold for an electron to escape a material's surface. It typically lies above a semiconductor's ...
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