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第 12 章

トランジスタ

バイポーラ接合トランジスタ
バイポーラ接合トランジスタ
Transistors play a vital role in electronic circuits, enabling the functionality of amplifiers, memories, and microprocessors. Transistors can be designed ...
BJT の構成
BJT の構成
Bipolar junction transistors have different configurations based on the common contact. The common base configuration features a shared base terminal for ...
BJT の動作原理
BJT の動作原理
Consider a PNP transistor in a common-base configuration, operating in active mode. Forward biasing reduces the emitter-base potential, enabling the ...
BJT の特性
BJT の特性
Consider the common-emitter configuration of the BJT. The voltage and current dependencies are measured experimentally to understand the current-voltage ...
BJT の動作モード
BJT の動作モード
A bipolar junction transistor has four modes of operation, depending upon the voltage polarities at the emitter-base junction and the collector-base ...
BJT の周波数応答
BJT の周波数応答
A common-emitter amplifier's DC bias point is determined by the base-emitter voltage, base current, and collector current. The load line is determined ...
BJT のカットオフ周波数
BJT のカットオフ周波数
The common base configuration's current gain is constant at low frequencies of the input signal but attenuates after a specific frequency known as the ...
BJT のスイッチング
BJT のスイッチング
Consider a switching circuit that involves a sudden change in the emitter-base voltage. Initially, both the base-emitter junction and the ...
BJT アンプ
BJT アンプ
In the active region of a common emitter NPN BJT, the emitter current is the sum of the base current and the collector current. Here, the base voltage ...
BJT アンプの小信号解析
BJT アンプの小信号解析
Consider a BJT  transistor amplifier circuit operating in its active region to provide linear amplification. The total instantaneous base-emitter ...
電界効果トランジスタ
電界効果トランジスタ
A field effect transistor is a three-terminal unipolar device comprising a gate, drain, and source terminal. Charge carriers flow from the source to the ...
JFET の特性
JFET の特性
The output characteristics of a JFET describe the relationship between the drain current and the drain-source voltage at various levels of gate-source ...
FET のバイアス
FET のバイアス
A junction field effect transistor is used in electronic circuits to control electrical currents. JFETs consist of an N-type or P-type silicon bar ...
MOS コンデンサ
MOS コンデンサ
MOS capacitors have three layers: the bottom layer is a semiconductor substrate, the middle is an insulating layer, and the top metal layer is the gate ...
MOSFET
MOSFET
The Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET is a semiconductor device with three terminals: the Source, the Drain, and the Gate and ...
MOSFET の特性
MOSFET の特性
The essential parameters of MOSFETs include the channel length, the channel width, the oxide thickness, the junction depth, and the substrate doping. With ...
MOSFET: エンハンスメントモード
MOSFET: エンハンスメントモード
The two modes of p- and n-channel MOSFETs are enhancement and depletion. Enhancement mode MOSFETs are typically off at zero gate-source voltage, meaning ...
MOSFET:ディプリーションモード
MOSFET:ディプリーションモード
Depletion-mode MOSFETs are already ON without a gate bias but need a gate-source voltage to switch OFF. They function like JFETs, where the drain-source ...
トランジスタ
トランジスタ
The MOSFET operates as a voltage-controlled current source in its active region, where the gate-to-source voltage regulates the drain current. This ...
トランジスタ
トランジスタ
Consider a MOSFET transistor amplifier circuit operating in its active region to provide linear amplification. The total instantaneous gate-to-source ...
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