Name: a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy
Uploaded: 2018-04-08T14:00:00.000+00:00
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Description: Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

이 작품은 자연 과학 재단의 중국 국가 (부여 No. 11402221와 11502224), 국가 열쇠 실험실의 강렬한 펄스 방사선 시뮬레이션 효과 (SKLIPR1513)와 호남 지방 키 연구 및 개발 계획 (제에 의해 지원 되었다 2016 주 2014)입니다.

1. 유연한 압 박막 제조
<ol><li>운 모 시트에서 1 cm × 1 cm 운 모 기판이 위로 잘라.</li>
	<li>양면 테이프를 사용 하 여 책상에이 1 cm × 1 cm 운 모 기질을 수정 합니다.</li>
	<li>껍질-운 모 레이어-의해-계층에서 원하는 두께 (50 µ m)까지 마이크로미터로 측정을 핀셋을 사용 합니다.</li>
	<li>붙여넣기를이 갓 5 ' 기판 홀더 실버 페인트의 얇은 레이어를 사용 하 여에 운 모 기판 죽 습 고 기판에 운을 단단히 부착 하 10 분 동안 뜨거운 접시에 120 ° C에서 그것을 치료.</li>
	<li>PLD (펄스 레이저 증 착) 기판 홀더를 PLD 챔버에 넣으십시오.</li>
	<li>반복 속도 (예를 들어, 10 Hz)을 선택 하 고 레이저 에너지 (예를 들어, 300 엠 제이).</li>
	<li>설정된 위치에 초점 렌즈를 이동 합니다.</li>
	<li>셔터를 열고 5 nm CoFe2O4 (CFO) 입금 [에너지 레이저: 300 엠 제이, 산소 압력: 50 mTorr, 샘플 온도: 590 ° C, 증 착 시간: 5 분] 레이저 (그림 1)을 실행 하 여 버퍼 층으로 박막.</li>
	<li>20-80 nm SrRuO3 (SRO) 입금 [에너지 레이저: 300 엠 제이, 산소 압력: 100 mTorr, 샘플 온도: 680 ℃, 증 착 시간: 10-30 분] 레이저 (실행 하 여 후속 전기 성능 테스트에 대 한 아래 전극으로 CFO 버퍼 층에 그림 1)입니다.</li>
	<li>보증금 150는 nm 압 [에너지 레이저: 300 엠 제이, 산소 압력: 100 mTorr, 샘플 온도: 650 ° C, 증 착 시간: 60 분] 레이저 (그림 1)을 실행 하 여 SRO 하단 전극 위에 박막.</li>
	<li>N2 를 사용 하 여 챔버를 환기 하 고 온도 실내 온도 도달 하면 압/운 모 샘플 (그림 2)를 제거 합니다.</li>
	<li>유리의 조각에 샘플을 넣어.</li>
	<li>샘플 위에 200 µ m 직경을 가진 미리 정의 된 메시를 넣어. 메시를 잘 해결 하 고 스퍼터 링 챔버로 메쉬 샘플을 넣어.</li>
	<li>DC 스퍼터 링 (10 mA, 8 mbar, 6 분) 영화에 Pt 최고 전극 입금 사용 합니다. 스퍼터 링 후 샘플을 제거 합니다.</li>
	<li>1mm x 1mm 압 섹션을 제거 칼 또는 20 %HF 산을 사용 합니다. 이것은 하단 SRO 전극 폭로 하 고 많은 작은 유연한 ferroelectric 커패시터를 형성입니다. 참고: SRO 하단 전극으로 성장 하 고 DC 많은 작은 커패시터를 스퍼터 링 압 박막, 그림 3에 나와 있는의 전자 속성을 측정 하 여 영화에 전극 위에 Pt를 입금.</li>
	<li>하단 SRO 전극의 전기 전도성을 증가 노출된 SRO에 전도성 실버 코트 페인트. 전도성 실버 노출된 SRO에 연결할 수 있는지 확인 하십시오.</li>
</ol>2. ferroelectric 특성
<ol><li>굽 힘 시험<ol>
<li>유연한 샘플의 뒷면에 접착제 같은 쉬운 샘플의 한 단계에서 다른 전송에 대 한 샘플 크기와 종이.</li>
		<li>압/운 모 ferroelectric 테스트 시스템 반도체 소자 분석기 테스트 보드에 놓습니다.</li>
		<li>Pt 최고 전극에 ferroelectric 테스트 시스템, 반도체 소자 분석기에의 한 측정 프로브를 넣고 분극 전기 분야 (P E) 히스테리시스 루프를 실버 SRO 레이어에 다른 측정 프로브를 넣어 고 샘플은 구부러진 곡선을 커패시턴스-전기 분야 (C-E).<ol>
<li>2 kHz 주파수에서 두 개의 프로브와 P-E 히스테리시스 루프를 측정 하 고 4 두 V. 측정 C-E 곡선 프로브 1 MHz 주파수에서와 제거 대 4 벤드펴기 샘플.</li>
		</ol>
</li>
		<li>양면 테이프를 사용 하 여 원하는 몰드에 유연한 압/운 모 박막을 보호 합니다. 측정 중 운의 미 끄 러/활공을 피하기 위해 주의.</li>
		<li>Ferroelectric 테스트 시스템 반도체 소자 분석기 테스트 보드에 탑재 합니다.</li>
		<li>동안 다른 프로브 접촉 하단 SRO 전극은 이전에 사용 하는 구성에 비슷한 코팅 (2.1.3 단계)를 통해 하나의 프로브 Pt 최고 전극에 넣어.</li>
		<li>P-E 히스테리시스 루프와 각종 인장 및 압축 굽 힘 반지름 (그림 4)에서 C-E 곡선을 측정 합니다.<ol>
<li>두 개의 프로브와 4 V 1 MHz 주파수에서 두 프로브 2 kHz 주파수와 4 대 법안 C-E 곡선에서 P-E 히스테리시스 루프를 측정 합니다.</li>
		</ol>
</li>
		<li>P-E와 C E 측정 완료 되 면 유연한 압 샘플을 제거 합니다.</li>
	</ol>
</li>
	<li>열 안정성<ol>
<li>압/운 모 ferroelectric 테스트 시스템 반도체 소자 분석기 테스트 보드에 넣어.</li>
		<li>Pt 최고 전극에 대 한 측정 프로브를 넣고 실버 SRO 레이어에 다른 측정 프로브를 넣어.</li>
		<li>샘플이 열 온도 제어 시스템을 엽니다.</li>
		<li>다른 온도 (25 ° C, 50 ° C, 75 ° C, 100 ° C, 125 ° C, 150 ° C, 175 ° C)에 P-E와 C E 측정을 수행 합니다.</li>
		<li>측정 완료 후 히터 어셈블리를 해제 하십시오.</li>
	</ol>
</li>
	<li>벤딩 cyclability 테스트<ol>
<li>이 설정의 두 개의 홈으로 유연한 압/운 모 탑재 합니다.</li>
		<li>모터의 도움으로 다른 쪽 끝에서 핀이 구부러지거나 하는 동안 샘플의 한쪽 끝을 수정 합니다.</li>
		<li>8 m m 절곡 과정 (그림 5) 전에 모터의 운동 (절곡) 방향 함께 압/운 모 길이 측정 하는 통치자를 사용 합니다.</li>
		<li>예제 수식에 따라 5mm 구 부 운동 길이 C 계산: C=L-2Rsin(L/2R), 어디 L 압/운 모 벤드펴기한 상태에서의 길이, R 벤딩 반지름 이며 C 모터의 움직임입니다.</li>
		<li>컴퓨터 (그림 6)에 주기 (1000)를 절곡의 수를 설정 합니다.</li>
		<li>앞뒤로 모터 동작을 시작 하려면 시작 버튼 (그림 6)을 클릭 합니다.</li>
		<li>샘플을 제거 하 고 ferroelectric 특성 유지 여부를 확인 하려면 P E를 측정.</li>
	</ol>
</li>
</ol>

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저자는 공개 경쟁 금융 관심 없다 있다.

Ferroelectric 요소 제작에서 핵심적인 단계는 깨끗 하 고 도/평면 기판 표면에의 사용에 있다. 보이는 쪼개기 고통에서 서피스를 방지에 관심을 지불, 레이어, 균열, 포함, 등 압 층의 증 착 후 분할 하는 데 필요한 갓 쪼개진된 운 모 표면 원자적 부드러운 하지만, 샘플에서 냉각 했다는 높은 산소 압력을 줄이기 위해 산소 공석 (200-500 Torr). 최고의 백 금 전극 현장 전 많은 Pt/압/SRO 커패시?...

유연한 비휘발성 메모리 요소 (NVME)의 성공적인 제작 유연한 전자의 모든 잠재력을 악용에 중요 한 역할을 한다. NVME 가벼운 무게, 낮은 비용, 낮은 전력 소비, 빠른 속도 높은 저장 밀도 기능 외에 데이터 저장, 정보 처리 및 통신 기능을 한다. 페로 Pb (Zr, Ti) O3 (압)의 큰 분극, 빠른 분극 스위칭, 높은 퀴리 온도, 낮은 강제 필드와 높은 압 전 계수를 고려 하 고 이러한 응용 프로그램에 대 한 인기 있는 시스템 역할을 합니다. Ferroelectric 비휘발성 기억에 외부 전압 펄스 두 나머지 분극 '0'과 '1'로 표현 하는 2 개의 안정 방향 사이 전환할 수 있습니다. 그것은 비-휘발성, 그리고 나노초 내에서 읽기/쓰기 프로세스를 완료할 수 있습니다. NVME 유기1,2,,34,,56 및 무기7,,89,10에 따라 ,11,12,13,,1415 ferroelectric 자료 유연한 기판에 시도. 그러나, 이러한 통합의 높은 온도 성장 또한 저하 장치 성능, 현재 누설 및 그들의 거친 표면 때문에 전기 단락 뿐만 아니라 기판의 무 능력에 의해 제한 됩니다. 유망한 결과도 불구 하 고 기판8 의 숱이 같은 전략을 대체 및15 유연 기판 코피 레이어 전송 고통을 정교한 다중 단계 프로세스에 비추어 제한 된 생존에 전송, 및 제한 된 적용의 예측입니다.
앞서 언급 한 이유로 탐험 더 유연한 전자 사전 소프트 기판의 제한 열 및 운영 안정성을 극복할 수 있는 적절 한 기판에 중대 하다. 자연 모스크바 운 모 (칼2(AlSi3O10) (OH)2) 개별적으로 매끄러운 표면, 높은 열 안정성, 화학 inertness, 높은 투명성, 기계적 유연성, 같은 독특한 기능으로 기판 및 현재 제조 방법 호환성 효과적으로 이러한 문제를 해결 하려면 사용할 수 있습니다. 더 많은 그래서, 단사 운 모 2 차원 계층된 구조 격자와 일치 하는 조건, 그로 인하여 크게 억제 효과 클램핑 기판 열 완화 판 데르 발스 피를 지원 합니다. 이러한 장점 기능 산화물16,17,18,19,20,,2122의 직접 성장에 이용 되는 23 모스크바에 최근에, 유연한 장치 응용 프로그램의 관점에서.
여기, 우리가 직접 코피 아직 유연한 리드 지르코늄 타이타늄 (압) 박막 모스크바 운 모에 성장 하는 프로토콜을 설명 합니다. 이 운 모, 반 데르 발스 heteroepitaxy 결과의 다양 한 속성에 펄스 레이저 증 착 과정을 통해 이루어집니다. 이러한 조작된 구조 엄밀한 단일 결정 기판에 코피 압의 모든 우수한 속성을 유지 하 고 우수한 열 및 기계적 안정성을 전시. 이 간단 하 고 신뢰할 수 있는 방법은 다단계 전송 및 전략 숱이 기판 기술의 이점을 제공 하 고 많이 기다려온 유연 하면서도 단일 결정 비 휘발성 메모리 요소에 대 한 필수의 개발을 용이 하 게 다음-세대 고성능 스마트 장치입니다.

<table><tbody><tr><td>&lt;strong&gt;Equipment&lt;/strong&gt;</td><td></td><td></td><td></td></tr><tr><td>hot plate</td><td>Polish</td><td>P-20</td><td></td></tr><tr><td>PLD system</td><td>PVD products</td><td>PLD 5000</td><td></td></tr><tr><td>Ferroelectric test system&amp;nbsp;</td><td>Radiant Technologies Precisions workstations&amp;nbsp;</td><td>RT66A</td><td></td></tr><tr><td>Semiconductor device analyzer&amp;nbsp;</td><td>Agilent&amp;nbsp;</td><td>B1500A</td><td></td></tr><tr><td>Bending molds</td><td>home-made</td><td></td><td>Machined teflon material</td></tr><tr><td>Bending stage</td><td>home-built</td><td></td><td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td></tr><tr><td>Sputtering system</td><td>Beijing&amp;nbsp;Elaborate</td><td>ETD-3000</td><td></td></tr><tr><td>&lt;strong&gt;Materials&lt;/strong&gt;</td><td></td><td></td><td></td></tr><tr><td>mica(001) sheets</td><td>Nilaco corporation&amp;nbsp;</td><td>990066</td><td></td></tr><tr><td>conductive silver paint</td><td>Ted Pella, INC</td><td>No.16033</td><td></td></tr><tr><td>CoFe&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt; target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>SrRuO&lt;sub&gt;3&lt;/sub&gt; target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>PbZr&lt;sub&gt;0.2&lt;/sub&gt;Ti&lt;sub&gt;0.8&lt;/sub&gt;O&lt;sub&gt;3 &lt;/sub&gt;target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>Pt target</td><td>Hefei Ke jing</td><td></td><td></td></tr></tbody></table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

그들은 휴대용 스마트 전자 장치에 대 한 적용 가능한 미래에, 고밀도 데이터 스토리지 및 낮은 전력 소모 기능 유연한 비휘발성 기억 많은 관심을 받았습니다. 그러나, 유연한 기판에 고품질 산화물 기반의 비휘발성 메모리 소재 특성 및 피할 수 없는 고온 제조 공정에 의해 종종 제한 됩니다. 이 논문에서는, 프로토콜은 직접 코피 아직 유연한 리드 지르코늄 타이타늄 메모리 요소 모스크바 운 모에 성장 것을 제안 하 고 있다. 다양 한 증 착 기술 및 측정 방법 스마트 장치의 다음 세대에 필요한 유연한 아직 단일 결정 비 휘발성 메모리 요소의 제조 가능

1 단계에에서 설명 된 대로 코피 압/SRO/CFO/운 모 박막 펄스 레이저 증 착 기법으로 예금 되었다. 그림 1 에서는 성장 계획 그리고 그림 2 는 압에 따라 실제 유연한 NVM 요소를 보여 줍니다.

기계적 안정성은 유연한 장치 응용 프로그램의 중요 한 측면 이다. 기계적인 flexing에 대 ?...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

이 논문에서 우리 직접 아직 코피는 성장 하는 프로토콜 유연한 리드 지르코늄 타이타늄 메모리 요소에 현재 모스크바 운 모.

제조 및 반 데르 발스 Heteroepitaxy에 따라 유연한 Ferroelectric 요소에 대 한 측정 방법

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

a-fabrication-measurement-method-for-flexible-ferroelectric-element

Universidad San Sebastian

Research

JoVE Journal

Engineering

8.2K 조회수.  Xiangtan University. 이 논문에서 우리 직접 아직 코피는 성장 하는 프로토콜 유연한 리드 지르코늄 타이타늄 메모리 요소에 현재 모스크바 운 모.

비디오: A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

공간적으로 밀폐 복합 산화물의 제조

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

연구

공학

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Chemically ordered alloys are useful in a variety of magnetic nanotechnologies. They are most conveniently prepared at an industrial scale using sputtering techniques. Here we describe a method for preparing epitaxial thin films of B2-ordered FeRh by sputter deposition onto single crystal MgO substrates. Deposition at a slow rate onto a heated substrate allows time for the adatoms to both settle into a lattice with a well-defined epitaxial relationship with the substrate and also to find their proper places in the Fe and Rh sublattices of the B2 structure. The structure is conveniently characterized with X-ray reflectometry and diffraction and can be visualised directly using transmission electron micrograph cross-sections. B2-ordered FeRh exhibits an unusual metamagnetic phase transition: the ground state is antiferromagnetic but the alloy transforms into a ferromagnet on heating with a typical transition temperature of about 380 K. This is accompanied by a 1% volume expansion of the unit cell: isotropic in bulk, but laterally clamped in an epilayer. The presence of the antiferromagnetic ground state and the associated first order phase transition is very sensitive to the correct equiatomic stoichiometry and proper B2 ordering, and so is a convenient means to demonstrate the quality of the layers that can be deposited with this approach. We also give some examples of the various techniques by which the change in phase can be detected.

A method to prepare epitaxial layers of ordered alloys by sputtering is described. The B2-ordered FeRh compound is used as an example, as it displays a metamagnetic transition that depends sensitively on the degree of chemical order and the exact composition of the alloy.

Metamagnetic B2-주문 FeRh 에피 층의 스퍼터 성장과 특성

Chemically ordered alloys are useful in a variety of magnetic nanotechnologies. They are most conveniently prepared at an industrial scale using ...

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at &#60;60 &#176;C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

We present the synthesis of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]x, x~2) via low temperature chemical vapor deposition (CVD). This optimized recipe yields an increase in Curie temperature from 400 K to over 600 K and a dramatic improvement in magnetic resonance properties.

자석의 유기 화학 기상 증착, 바나듐 테트라시

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in ...

화학

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

소설 재료의 저온 Magnetotransport 측정을위한 고급 실험 방법

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

원자 층 증착을 통해 게르마늄에 페 로브 스카이 스트론튬 티탄의 에피 택셜 성장

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

측면 NIPIN 포토 트랜지스터에 따라 유연한 이미지 센서의 제조

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

2 차원 일렉트로닉스를 조작 하는 표준 및 신뢰할 수 있는 방법

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due to their potential applications for future device technologies such as sensors and storage. However, conventional approaches, which usually utilize materials containing magnetic metal ions (or radicals), have a major problem: only a few materials have been found to show the coupling phenomena at room temperature. Recently, we proposed a new approach to achieve room-temperature magnetoelectrics. In contrast to conventional approaches, our alternative proposal focuses on a completely different material, a &#34;liquid crystal&#34;, free from magnetic metal ions. In such liquid crystals, a magnetic field can be utilized to control the orientational state of constituent molecules and the corresponding electric polarization through magnetic anisotropy of the molecules; it is an unprecedented mechanism of the magnetoelectric effect. In this context, this paper provides a protocol to measure ferroelectric properties induced by a magnetic field, that is, the direct magnetoelectric effect, in a liquid crystal. With the method detailed here, we successfully detected magnetically-tuned electric polarization in the chiral smectic C phase of a liquid crystal at room temperature. Taken together with the flexibility of constituent molecules, which directly affects the magnetoelectric responses, the introduced method will serve to allow liquid crystal cells to acquire more functions as room-temperature magnetoelectrics and associated optical materials.

In this report, we present a protocol to examine direct magnetoelectric effects, i.e., induction of ferroelectric polarization by applying magnetic fields, in liquid crystals. This protocol provides a unique approach, supported by the softness of liquid crystals, to achieve room-temperature magnetoelectrics.

액정에 자석으로 조정 Ferroelectric 편광 측정

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due ...

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We demonstrate not only lateral control but, importantly, also control over the angular alignment of adjacent layers. The core of the technique is represented by a home-built transfer setup which allows the user to control the position of the individual crystals involved in the transfer. This is achieved with sub-micrometer (translational) and sub-degree (angular) precision. Prior to stacking them together, the isolated crystals are individually manipulated by custom-designed moving stages that are controlled by a programmed software interface. Moreover, since the entire transfer setup is computer controlled, the user can remotely create precise heterostructures without coming into direct contact with the transfer setup, labeling this technique as &#8220;hands-free&#8221;. In addition to presenting the transfer set-up, we also describe two techniques for preparing the crystals that are subsequently stacked.

In this work we describe a technique that is used to create new crystals (van der Waals heterostructures) by stacking ultrathin layered 2D materials with precise control over position and relative orientation.

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We ...