This program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA). Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government.

1.实验装置<ol><li>找到一个合适的通风柜的测量技术，并删除任何无关的设备，以便能更好的空气流量，降低塞满。 不要在通风橱中使用比氢氟酸（HF） 以外的任何化学物质。 </li><li>使用电导率计通风柜内的抽头测试去离子（DI）水的质量。确保DI水具有至多0.055μS/厘米，在20℃的温度的电导。 </li><li>将少数载流子寿命测试仪到通风橱。将电缆连接到一台计算机，这是位于桌子上的通风柜之外。 </li><li>交换机上的计算机和寿命测试。打开计算机上的寿命测试文件，然后单击"测量"按钮，以确保电脑和寿命测试仪之间的正确沟通。在寿命测试仪的光源应闪烁如果电脑和测试仪已正确连接。 </LI&gt; <li>放置在通风柜内部的卤素灯。放置灯，使得它可以照亮寿命测试阶段，其中，样品将位于。 </li><li>卤素灯连接到应位于通风柜外部的电源。当卤素灯被打开，其强度应至少为0.02瓦/厘米2的寿命试验机的阶段。 </li></ol> 2.准备15％的HF溶液注:HF是一种危险化学品，必须小心使用。它会导致缓慢的，持续的，并暴露于身体造成严重损害。 HF不容易燃烧的皮肤像其它酸 - 而它吸收迅速进入皮肤并导致深起泡和损坏骨头。这意味着，骨头变脆，起泡作为氟发生反应的钙。高频还可以结合与游离钙被用于神经调节和渗透细胞的平衡，使游离钙在体内的结合可能是致命的，这是最重要的用户遵循实验室安全协议使用HF时，并确保他们知道HF急救箱和hexafluorine（或葡萄糖酸钙凝胶）的位置。 <ol><li>放置一个化学清洁的圆形塑料容器（H:55毫米，D:170毫米）放入通 ​​风柜（同实施1）部分。 容器必须有一个透明的塑料盖。请参阅如何化学清洗，使用前容器第6部分。 </li><li>清除周围的塑料容器中的区域，在通风橱使HF溶液可以在没有任何障碍物附近来制备。 </li><li>适用于所有个人防护装备（PPE）。 </li><li>注意:加入50 ml的HF与至100毫升DI水（H 2 O）在容器中。 </li><li>注意:添加20毫升盐酸（HCl）的容器和混合H 2 O的:HF:用塑料镊子HCl溶液。冲洗镊子仔细算账。 </li><li>注意:将盖子上的塑料容器，并允许soluti关于沉降1小时。在此期间，高频烟雾会凝结在盖子。 </li><li>适当标记的容器，并清楚地表明，它含有HF。 注:HF溶液将持续1-2个月，大量使用。因此就没有必要在每次的测量是被执行以更换溶液。 </li></ol> 3.标定寿命测试仪<ol><li>定位已知电阻率和电导中的至少6个硅晶片。理想情况下，电阻率范围应涵盖0.1〜100Ω厘米。 </li><li>在电脑上，打开寿命测试仪校准文件。输入表中的每一晶片的电阻率，然后单击"更新＃晶圆"。 </li><li>单击校准文件中的"获取数据"按钮，进入寿命试验机的详细信息。 </li><li>应用所有必要的个人防护装备。 </li><li>注意:将充满对生命周期测试阶段的HF溶液，将其放置在感应线圈（BLU塑料容器Ë圆形区域）。 </li><li>当系统提示来衡量计算机上的"空气电压"，单击"确定"按钮测量HF溶液的电压。在这种情况下，空气已被取代的HF溶液的电导。 </li><li>警告:小心地取出容器装满HF从舞台并将其放置在通风橱板凳上。小心地取下盖子。 </li><li>注意:当盖已被从容器中取出，浸泡在第一硅晶片到使用塑料镊子HF溶液。将盖子放回到容器上。 </li><li>注意:将塑料容器中放回寿命测试阶段，它通过感应线圈的位置。确保在硅晶片的中心在线圈（蓝色圆圈区域）。 </li><li>当系统提示来衡量计算机上的"采样电压"，再次单击"确定"按钮。从舞台中删除容器，并将其放在通风橱板凳上。 </li><li>注意:小心ř<html>用塑料镊子emove从HF溶液中的硅晶片和冲洗晶片专用清洗烧杯。做水龙头在通风橱下最后的冲洗。 </li><li>注意:将盖子放回容器，并且该容器定位放回寿命测试阶段。 </li><li>直到所有的样品进行了测量，重复步骤3.6到3.12。 </li><li>一旦所有的样品进行了测量，点击在校准文件中的&#39;适合数据"按钮。这将适合抛物线曲线所测量的数据，并提供校准系数A，B和C的特定于这个设置。 </li><li>在电脑上，打开寿命测试文件，然后单击"设置"选项卡上。输入新的校准系数A，B和C的HF设置。保存该文件以新的名称。 注:HF设置只需要校准每6个月。因此就没有必要在每次的测量是将要执行校准设置。 </li></ol>jove_title"&gt; 4，硅片的湿化学处理前的测量<ol><li>准备标准清洁1（SC 1）。 <ol><li>注意:在所分配的碱性通风柜，在2升玻璃烧杯中，添加185个ml的氢氧化铵（NH 4 OH）与1295毫升去离子水。 </li><li>注意:将烧杯上热板和热H 2 O的:NH 4 OH溶液至〜50℃的温度下进行。用表玻璃盖住烧杯。 </li><li>注意:一旦H 2 O的:NH 4 OH溶液达到的〜50℃的温度下，加185个毫升过氧化氢​​（H 2 O 2），并继续加热直到温度达到〜75℃。该H 2 O的:NH 4 OH:H 2 O 2溶液称为SC 1。 注:SC 1应每天到有效清洁硅晶片改变。 </li></ol></li><li>准备标准清洁2（SC 2）。 <ol><li>注意:在酸性分配的通风橱，添加185毫升HCl与一二九五毫升DI水在2升玻璃烧杯中。 </li><li>注意:将烧杯上热板和热H 2 O的:HCl溶液至〜50℃的温度下进行。用表玻璃盖住烧杯。 </li><li>注意:一旦H 2 O的:盐酸溶液达到的〜50℃的温度下，加185个毫升的 H 2 O 2，继续加热直到温度达到〜75℃。该H 2 O的:盐酸:H 2 O 2溶液被称为SC 2。 注:更改SC 2每日有效清洁硅晶片。 </li></ol></li><li>制备硅蚀刻溶液。 <ol><li>在所分配的碱性通风柜，添加1600毫升四甲基氢氧化铵（TMAH）的一种化学清洁 2升玻璃烧杯中。请参阅如何化学清洗，使用前烧杯中第6节。 </li><li>将烧杯到热板上并加热TMAH溶液至温度85〜6℃。用表玻璃盖住烧杯。 注意:TMAH溶液将不需要改变，直到它开始结晶， 即，1个月后。 </li></ol></li><li>进行湿化学处理。 <ol><li>装载样品到石英摇篮，并将其放置在实验室的公共HF溶液。的浓度不是关键的。 </li><li>经过约10秒一次的样品成为疏水性（拉干），请从HF溶液的摇篮和冲洗用3烧杯装满去离子水。 </li><li>运输晶片的摇篮通风柜，其中SC 1已经准备好。当SC 1已稳定在〜75℃，慢慢浸入晶片的摇篮到SC 1。 </li><li>清洁中的SC 1晶片10分钟。 </li><li> 10分钟后已经过去了，从SC 1中取出晶片的摇篮和使用三个2升的玻璃烧杯装满去离子水冲洗。用去离子水填充他们之前，这些玻璃烧杯化学清洗 。请参见第6如何化学清洗烧杯。 </li><li>清洗后，将样品插入了仅针对后的SC 1处理专用HF溶液。的浓度不是关键的。 </li><li>经过约10秒一次的样品成为疏水性（拉干），请从HF溶液的摇篮和冲洗用3烧杯装满去离子水。使用相同的烧杯中的步骤4.4.5。 </li><li>运输晶片的摇篮通风柜，其中SC 2已做好准备。当SC 2已稳定在〜75℃，慢慢浸入晶片的摇篮到SC 2。 </li><li>清洁中的SC 2晶片10分钟。 </li><li> 10分钟后已经过去了，从SC 2去除晶片的摇篮，并使用3烧杯装满去离子水冲洗。使用相同的烧杯中的步骤4.4.5。 注意:晶片的摇篮可被存储在漂洗烧杯装满去离子水直到第二天之一。 </li><li>清洗后，将样品到HF溶液了仅针对交专用SC 2处理。的浓度不是关键的。 </li><li>经过约10秒一次的样品成为疏水性（拉干），请从HF溶液的摇篮和冲洗用3烧杯装满去离子水。使用相同的烧杯中的步骤4.4.5。 </li><li>运送晶片的摇篮到通风柜，其中TMAH溶液已被制备。当TMAH溶液稳定在〜85°C，慢慢浸入晶片的摇篮到TMAH溶液。 </li><li>蚀刻在TMAH晶片5分钟。这将删除〜5微米的硅。 </li><li> 5分钟后已经过去了，从TMAH溶液去除晶圆的摇篮，并使用3烧杯装满去离子水冲洗。使用相同的烧杯中的步骤4.4.5。超过3冲洗可能需要为TMAH是相当"粘性"。 </li><li>运送晶片在去离子水中摇篮到通风柜其中实验已设置。见第1.1节。 </li><li>内STE后2小时测量制备的硅晶片p 4.4.16。 </li></ol></li></ol> 5.测量程序<ol><li>应用所有必要的个人防护装备。 </li><li>填充两个2升塑料烧杯去离子水，并将其放置在通风橱。这些将用于漂洗该硅样品后测量。 </li><li>将塑料镊子到一个空500毫升塑料烧杯和地点附近的漂洗烧杯通风柜内。这些镊子将用来处理该硅样品。 </li><li>在电脑上，打开寿命测试仪文件。确保文件包含高频测量设置正确的校准系数。见第3节。 </li><li>在寿命测试仪的文件，选择"过渡"模式。进入硅晶片的细节将被测量，例如，厚度，电阻率和掺杂剂类型。 </li><li>注意:将容器（盖子）充满HF到寿命测试的阶段，其中心在感应线圈（蓝色圆圈区域）。让解决方案满足于1分钟。 </li><li>在电脑上，点击的寿命测试文件中的&#39;零仪器的按钮。这将测量溶液的电压。 注意:随着时间的推移，该溶液电压将降低，因为该解决方案的组合物随时间的变化。不论此，HF溶液不显示在其钝化质量任何退化，这就是为什么该溶液可以在不被改变用于1-2个月。 </li><li>警告:小心地从生命周期测试阶段的容器，并把它放在通风橱板凳上。 </li><li>警告:小心地从容器中充满HF溶液去除盖子。如果有在盖一些凝聚，在使用抽头通风柜仔细漂洗在DI水中的盖子。 </li><li>注意:小心沉浸第一硅晶片到HF溶液。使用塑料钳，轻轻按下在硅晶片上向下，以确保它是坐在容器的底部。 </li><li>冲洗镊子S和把它们放回空500毫升塑料烧杯中。 </li><li>警告:小心地将盖子背面的容器上，然后放置在生命周期测试阶段的容器。确保在硅晶片定位在感应线圈（蓝色圆圈区域）。 </li><li>冲洗并擦干你的手套。 操作计算机前将其删除。 </li><li>如果荧光灯的通风橱上，它必须切断的测量是前进行。在测量过程中是必需的最低限度的光。 </li><li>接通卤素灯，并确保其通过在塑料容器的盖照射硅晶片。时间为1分钟（准确的时间不是关键的）。 </li><li>在光照期，请在计算机上的文件生命周期的"测量"按钮。一个小窗口贴上"以数据"将会出现。 </li><li>在"获取数据"窗口中，键入该文件的名称。在"采样平均的选10。 </li><li>当硅晶片已照射1分钟，关掉卤素灯并立即点击&#39;以数据"窗口"平均值"按钮。寿命测试仪将闪烁10次，平均寿命测量。 注意:一旦卤素灯关闭时，在硅晶片的钝化将开始降低，因此照射后立即测量，以达到最佳的结果是很重要的。 </li><li>当平均完成后，单击"获取数据"窗口中的"确定"按钮。 </li><li>如果其他的测量需要，重复步骤5.15-5.18。 </li><li>注意:一旦测量完成后，从生命周期测试阶段取出容器，并把它放在通风橱板凳上。 </li><li>警告:小心地从容器中充满HF溶液去除盖子。如果有在盖一些凝聚，在使用抽头仔细冲洗盖子在DI水在通风柜。 </li><li>警告:小心地从HF溶液用塑料镊子硅片和冲洗的专用清洗烧杯晶圆。做水龙头在通风橱下最后的冲洗。 </li><li>如果有更多的样品进行测量时，重复步骤5.10-5.23。 </li><li>一旦所有的样品进行了测量，确保了盖子被放置在容器上，并存储在通风柜HF溶液。确保容器妥善标注。 </li><li>冲洗所有烧杯和镊子，并将它们存储在实验室其分配的斑点。 </li><li>允许寿命测试者使用后仍留在通风柜1小时，然后从通风橱中取出。 </li></ol>烧杯和容器的6化学清洗<ol><li>在分配的碱性通风柜，准备SC 1解决方案中的部分4.1.1-4.1.4介绍。 </li><li>以化学清洁烧杯和容器，倒入SC 1溶液倒入烧杯/容器。在烧杯CAÑ​​只清洗一次。 </li><li>让溶液清洗烧杯/容器10分钟。如果烧杯/容器是塑料的，它不能被放置在热板上，因此，SC 1溶液将在干净冷却。这不会影响清洁过程。 </li><li> 10分钟后，倒入SC 1解决方案到另一烧杯/容器是否需要清洗也。否则让SC 1解凉的大烧杯中。一旦冷却，SC 1可浇下来用流动水下沉。 </li><li>冲洗SC 1清洗烧杯/容器的去离子水。 </li><li>在分配酸通风柜，准备SC 2溶液中的部分4.2.1-4.2.4介绍。 </li><li>倒入SC 2溶液倒入烧杯/容器从步骤6.5。允许溶液清洗烧杯/容器10分钟。 </li><li> 10分钟后，倒入SC 2溶液到另一烧杯/容器是否需要清洗也。否则让SC 2溶液酷在一个大烧杯中。一旦冷却，SC 2可浇下来牛逼他水槽用流动水。 </li><li>冲洗SC 2清洁烧杯/容器的去离子水。烧杯/容器现在化学清洗。 </li></ol>

<ol>
	<li>Sinton, R. A., Cuevas, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Contactless+determination+of+current-voltage+characteristics+and+minority-carrier+lifetimes+in+semiconductors+from+quasi-steady-state+photoconductance+data.">Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data.</a> Appl. Phys. Lett. 69 (17), 2510-2512 (1996).</li><li>Wan, Y., McIntosh, K. R., Thomson, A. F., Cuevas, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Low+surface+recombination+velocity+by+low-absorption+silicon+nitride+on+c-Si.">Low surface recombination velocity by low-absorption silicon nitride on c-Si.</a> IEEE J. Photovoltaics. 3 (1), 554-559 (2013).</li><li>Hoex, B., Schmidt, J., Pohl, P., van de Sanden, M. C. M., Kessels, W. M. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Silicon+surface+passivation+by+atomic+layer+deposited+Al2O3.">Silicon surface passivation by atomic layer deposited Al2O3.</a> J. App. Phys. 104 (4), 044903 (2008).</li><li>Dauwe, S., Schmidt, J., Hezel, R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Very+low+surface+recombination+velocities+on+p.-+and+n.-type+silicon+wafers+passivated+with+hydrogenated+amorphous+silicon+films.">Very low surface recombination velocities on p.- and n.-type silicon wafers passivated with hydrogenated amorphous silicon films.</a> , 1246-1249 (2012).</li><li>Macdonald, D., Cuevas, A., Wong-Leung, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Capture+cross-sections+of+the+acceptor+level+of+iron-boron+pairs+in+p-type+silicon+by+injection-level+dependent+lifetime+measurements.">Capture cross-sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements.</a> J. App. Phys. 89 (12), 7932-7339 (2001).</li><li>Schmidt, J., Bothe, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Structure+and+transformation+of+the+metastable+boron-+and+oxygen-related+defect+center+in+crystalline+silicon.">Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon.</a> Phys. Rev. B. 69 (2), 024107 (2004).</li><li>Rougieux, F., Grant, N., Murphy, J., Macdonald, <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=D.+Influence+of+Annealing+and+Bulk+Hydrogenation+on+Lifetime+Limiting+Defects+in+Nitrogen-Doped+Floating+Zone+Silicon.">D. Influence of Annealing and Bulk Hydrogenation on Lifetime Limiting Defects in Nitrogen-Doped Floating Zone Silicon.</a> IEEE J. Photovoltaics. 5 (2), 495-498 (2014).</li><li>Zheng, P., Rougieux, F., Grant, N., Macdonald, D. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Evidence+for+vacancy-related+Recombination+Active+Defects+in+as-grown+n-type+Czochralski+Silicon.">Evidence for vacancy-related Recombination Active Defects in as-grown n-type Czochralski Silicon.</a> IEEE J. Photovoltaics. 5 (1), 183-188 (2014).</li><li>Grant, N. E., Rougieux, F. E., Macdonald, D., Bullock, J., Wan, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Grown-in+point+defects+limiting+the+bulk+lifetime+of+p.-type+float-zone+silicon+wafers.">Grown-in point defects limiting the bulk lifetime of p.-type float-zone silicon wafers.</a> J. App. Phys. 117 (5), 055711 (2015).</li><li>Hallam, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Hydrogen+passivation+of+B-O+defects+in+Czochralski+silicon.">Hydrogen passivation of B-O defects in Czochralski silicon.</a> Energy Procedia. 38, 561-570 (2013).</li><li>Hallam, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Advanced+bulk+defect+passivation+for+silicon+solar+cells.">Advanced bulk defect passivation for silicon solar cells.</a> IEEE J. Photovoltaics. 4 (1), 88-95 (2014).</li><li>Hornyi, T. S., Pavelka, T., Ttt, P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=In+situ+bulk+lifetime+measurement+on+silicon+with+a+chemically+passivated+surface.">In situ bulk lifetime measurement on silicon with a chemically passivated surface.</a> App. Surf. Sci. 63 (1-4), 306-311 (1993).</li><li>Meier, D. L., Page, M. R., Iwaniczko, E., Xu, Y., Wang, Q., Branz, H. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Determination+of+surface+recombination+velocities+for+thermal+oxide+and+amorphous+silicon+on+float+zone+silicon.">Determination of surface recombination velocities for thermal oxide and amorphous silicon on float zone silicon.</a> , (2007).</li><li>Chhabra, B., Bowden, S., Opila, R. L., Honsberg, C. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+effective+minority+carrier+lifetime+on+silicon+substrates+using+quinhydrone-methanol+passivation.">High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation.</a> App. Phys. Lett. 96 (6), 063502 (2010).</li><li>Chhabra, B., Weiland, C., Opila, R. L., Honsberg, C. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Surface+characterization+of+quinhydrone-methanol+and+iodine-methanol+passivated+silicon+substrates+using+X-ray+photoelectron+spectroscopy.">Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy.</a> Phys. Stat. Sol. (a). 208 (1), 86-90 (2011).</li><li>Yablonovitch, E., Allara, D. L., Chang, C. C., Gmitter, T., Bright, T. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Unusually+low+surface+recombination+velocity+on+silicon+and+germanium+surfaces.">Unusually low surface recombination velocity on silicon and germanium surfaces.</a> Phys. Rev. Lett. 57 (2), 249-252 (1986).</li><li>Grant, N. E., McIntosh, K. R., Tan, J. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Evaluation+of+the+bulk+lifetime+of+silicon+wafers+by+immersion+in+hydrofluoric+acid+and+illumination.">Evaluation of the bulk lifetime of silicon wafers by immersion in hydrofluoric acid and illumination.</a> J. Solid State Sci. Technol. 1 (2), P55-P61 (2012).</li><li>Grant, N. E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Light+enhanced+hydrofluoric+acid+passivation+for+evaluating+silicon+bulk+lifetimes.">Light enhanced hydrofluoric acid passivation for evaluating silicon bulk lifetimes.</a> 28.th. European Photovoltaic Solar Energy Conference. , 883-887 (2013).</li><li>Grant, N. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Surface passivation and characterization of crystalline silicon by wet chemical treatments. , (2012).</li><li>Kern, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+evolution+of+silicon+wafer+cleaning+technology.">The evolution of silicon wafer cleaning technology.</a> J. Electrochem. Soc. 137 (6), 1887-1892 (1990).</li><li>Angermann, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Wet-chemical+passivation+of+atomically+flat+and+structured+silicon+substrates+for+solar+cell+application.">Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application.</a> App. Surf. Sci. 254 (12), 3615-3625 (2008).</li><li>Angermann, H., Henrion, W., Rseler, A., Rebien, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Wet-chemical+passivation+of+Si(111)-+and+Si(100)-substrates.">Wet-chemical passivation of Si(111)- and Si(100)-substrates.</a> Mat. Sci. Eng. B. 73 ((1-3)), 178-183 (2000).</li><li>Bertagna, V., Plougonven, C., Rouelle, F., Chemla, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=p-+and+n-type+silicon+electrochemical+properties+in+dilute+hydrofluoric+acid+solutions.">p- and n-type silicon electrochemical properties in dilute hydrofluoric acid solutions.</a> J. Electrochem. Soc. 143 (11), 3532-3538 (1996).</li><li>Bertagna, V., Erre, R., Rouelle, F., Chemla, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ionic+components+dependence+of+the+charge+transfer+reactions+at+the+silicon/HF+solution+interface.">Ionic components dependence of the charge transfer reactions at the silicon/HF solution interface.</a> J. Solid State Electrochem. 4 (1), 42-51 (1999).</li><li>Kolasinski, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+mechanism+of+Si+etching+in+fluoride+solutions.">The mechanism of Si etching in fluoride solutions.</a> Phys. Chem. Chem. Phys. 5 (6), 1270-1278 (2003).</li><li>Trucks, G. W., Raghavachari, K., Higashi, G. S., Chabal, Y. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanism+of+HF+etching+of+silicon+surfaces:+A+theoretical+understanding+of+hydrogen+passivation.">Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation.</a> Phys. Rev. Lett. 65 (4), 504-507 (1990).</li><li>Zhang, X. G. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Electrochemistry of silicon and its oxide. , (2001).</li></ol>

The authors have nothing to disclose.

成功地执行上述的体硅寿命测量技术是基于三个关键步骤，（ⅰ）化学清洗和蚀刻硅晶片，（ⅱ）浸没在15％的HF溶液和（iii）照明1分钟17， 18,19。如果没有这些措施，大部分一辈子不能有把握测量。 作为测量技术是在RT进行的，所述表面钝化质量是高度敏感的表面污染（金属，有机膜）。因此，为了有效地除去表面的污染物，将SC 1溶液时（H 2 O的:NH 4...

高寿命（&gt; 1毫秒）单晶硅正变得对高效率太阳能电池更重要。了解嵌入式杂质的复合特性一直是，而且仍然是一个重要的课题。其中最广泛使用的技术来检查生缺陷的重组活性的是由一个光电导方法1。通过这种技术，通常难以从体重组完全分开表面，从而使得难以检查生缺陷的复合特性。幸运的是，存在若干电介质膜，可以实现非常低的有效表面重组&lt;5厘米/秒的速度（S EFF），从而有效地抑制表面复合。这些是，氮化硅（SiN X:H）2，氧化铝（Al 2 O 3）3和非晶硅 （a -Si:H）4。沉积和一个nealing这些介电膜的温度（〜400℃）被认为是足够低不永久停用的生缺陷的重组活性。这方面的例子是铁-硼5和硼氧6的缺陷。然而，近来人们发现， 在正型的Czochralski（CZ）硅空位-氧空位和磷缺陷可在温度250-350℃的7,8-完全停用。同样，在浮区（FZ）P型硅的一个缺陷被发现禁用在约250℃9。因此，如等离子体增强化学气相沉积（PECVD），原子层沉积（ALD）的常规钝化技术可能不适合用于抑​​制表面复合审查成年散装缺陷。此外， 有 SiN x:H和的a-Si:H膜已经显示出通过氢化10,11停用体硅缺陷。因此，研究重组活动Ø<html> ˚F生缺陷，一个RT表面钝化技术将是理想的。湿化学表面钝化满足这一要求。 在20世纪90年代Horanyi 等人证明了在碘乙醇硅片浸没（IE）的解决方案，提供了一种装置，以钝化的硅晶片，实现小号 EFF &lt;10厘米/秒12。在2007 Meier等人表明，碘-甲醇（IM）的解决方案可以减少表面复合至7厘米/秒13，而在2009尔斯基等人证明，5厘米小号 EFF /秒，可通过浸渍硅片达到在氢醌-甲醇（QM）解决方案14,15。尽管被IE，IM和QM解决方案实现了优异的表面钝化，它们不提供足够的表面钝化（S EFF &lt;5厘米/秒），以测量高纯度硅晶片的体寿命。 NT"&gt;另一种方式浸入硅晶片在HF酸以达到表面钝化的高水平。使用HF钝化硅片的概念最早是由Yablonavitch 等人介绍，在1986年，谁表现的纪录低的S EFF 0.25±0.5厘米/秒16。虽然优异的表面钝化被次比对高电阻率的晶片，我们已经发现该技术是非重复的，从而增加了一个大的不确定性的寿命测量。因此，通过一致地实现，以限制不确定性非常低的S EFF（〜1厘米/秒），我们已经开发出一种新的HF的钝化技术，其包括三个关键步骤，（ⅰ）化学清洗和硅晶片的蚀刻，（ⅱ）浸没在15％的HF溶液和（iii）照明1分钟17,18，这个过程是既简单又有效的时间相比于传统的PECVD法和ALD沉积技术上面列出。

<table><tbody><tr><td>Hydrofluoric acid (48%)</td><td>Merck Millipore,&amp;nbsp; &amp;nbsp;http://www.merckmillipore.com/AU/en/product/Hydrofluoric-acid-48%25,MDA_CHEM-100334</td><td>1003340500</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Hydrochloric acid 32%, AR</td><td>ACI Labscan, http://www.rcilabscan.com/modules/productview.php?product_id=1985</td><td>107209</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Ammonia (30%) Solution AR</td><td>Chem-supply, https://www.chemsupply.com.au/aa005-500m</td><td>AA005</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Hydrogen Peroxide (30%)</td><td>Merck Millipore, http://www.merckmillipore.com/AU/en/product/Hydrogen-peroxide-30%25,MDA_CHEM-107209</td><td>1072092500</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Tetramethylammonium hydroxide (25% in H&lt;sub&gt;2&lt;/sub&gt;O)</td><td>J.T Baker, https://us.vwr.com/store/catalog/product.jsp?product_id=4562992</td><td>5879-03</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>640 ml round plastic container</td><td>Sistema, http://sistemaplastics.com/products/klip-it-round/640ml-round</td><td></td><td>This is a good container for storing the 15% HF solution in.</td></tr><tr><td>WCT-120 lifetime tester</td><td>Sinton Instruments, http://www.sintoninstruments.com/Sinton-Instruments-WCT-120.html</td><td></td><td></td></tr><tr><td>Dell workstation with Microsoft Office Pro, Data acquisition card and software including Sinton Software under existing license.</td><td>Sinton Instruments, http://www.sintoninstruments.com</td><td></td><td></td></tr><tr><td>Halogen optical lamp, ELH 300 W, 120 V</td><td>OSRAM Sylvania, http://www.sylvania.com/en-us/products/halogen/Pages/default.aspx</td><td>54776</td><td>Any equivalent lamp could be used.</td></tr><tr><td>Voltage power source</td><td>Home made power supply</td><td></td><td>Any power supply could be used provided it can produce up to 90 Volts and 1-5 Amps.</td></tr><tr><td>Conductivity meter</td><td>WTW, http://www.wtw.de/uploads/media/US_L_07_Cond_038_049_I_02.pdf</td><td>LF330</td><td></td></tr></tbody></table>

light enhanced hydrofluoric acid passivation: a sensitive technique for detecting bulk silicon defects

甲过程浸入晶片在氢氟酸（HF）时，提出暂时达到表面钝化的一个非常高的水平，以测定硅晶片的体寿命（&gt; 100微秒）。通过这种方法，需要三个关键步骤，以实现体寿命。首先，前浸渍硅晶片在HF，它们被化学清洗，并随后蚀刻25％氢氧化四甲铵。其次，经化学处理的晶片，然后放入装满HF和盐​​酸的混合物中的大塑料容器，然后集中于感应线圈的光导率（PC）的测量结果。第三，为了抑制表面复合，并测量体寿命，晶片被照射在0.2个太阳用于使用卤素灯1分钟，照明被关闭，和PC测量立即服用。通过此过程，体硅缺陷的特性可以精确地确定。毛皮thermore，可以预料，一个敏感的RT表面钝化技术将是必不可少的检查体硅缺陷时，他们的浓度低（&lt;10 12 cm -3）的。

图1a示出的示意图和图1b示出的实验装置的照片。当硅晶片浸入HF溶液中，随后放置在寿命测试阶段和执行测量（照明之前），一个寿命曲线，它是由表面复合的限制将导致，如在图2所示的蓝色三角形。然而，当样品被照射1分钟（同时浸入HF）， 如图1，和一个测量照射后立即进行，增加的寿命会发生，如在图2中所示的?...

Watch this Scientific Journal Video about Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects at JoVE.com

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

光增强氢氟酸钝化:一个敏感的技术检测散装硅缺陷

一个RT液体表面钝化技术研究体硅缺陷的重组活性描述。对于该技术是成功的，三个关键的步骤是必需的:（ⅰ）化学清洗和硅的蚀刻，硅的（ⅱ）浸没在15％的氢氟酸和（iii）照明1分钟。

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

light-enhanced-hydrofluoric-acid-passivation-sensitive-technique-for

Universidad San Sebastian

Research

JoVE Journal

Engineering

9.2K 次观看.  Australian National University. 一个RT液体表面钝化技术研究体硅缺陷的重组活性描述。对于该技术是成功的，三个关键的步骤是必需的:（ⅰ）化学清洗和硅的蚀刻，硅的（ⅱ）浸没在15％的氢氟酸和（iii）照明1分钟。 

视频: Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11
Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption.
To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues.
The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans.
When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29

Use of photonic crystal slow light waveguides and cavities has been widely adopted by the photonics community in many differing applications. Therefore fabrication and characterization of these devices are of great interest. This paper outlines our fabrication technique and two optical characterization methods, namely: interferometric (waveguides) and resonant scattering (cavities).

光子晶体慢光波导和腔体的制备与表征

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view ...

科研

工程学

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

硅表面润湿性的选择区域改性脉冲紫外激光照射在液体环境

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

一种新的方法<em&gt;原位</em&gt;纳米级样品的机电表征

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

基于侧向 NIPIN Phototransistors 的柔性图像传感器的研制

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Synthesis, Functionalization, and Characterization of Fusogenic Porous Silicon Nanoparticles for Oligonucleotide Delivery

With the advent of gene therapy, the development of an effective in vivo nucleotide-payload delivery system has become of parallel import. Fusogenic porous silicon nanoparticles (F-pSiNPs) have recently demonstrated high in vivo gene silencing efficacy due to its high oligonucleotide loading capacity and unique cellular uptake pathway that avoids endocytosis. The synthesis of F-pSiNPs is a multi-step process that includes: (1) loading and sealing of oligonucleotide payloads in the silicon pores; (2) simultaneous coating and sizing of fusogenic lipids around the porous silicon cores; and (3) conjugation of targeting peptides and washing to remove excess oligonucleotide, silicon debris, and peptide. The particle&#8217;s size uniformity is characterized by dynamic light scattering, and its core-shell structure may be verified by transmission electron microscopy. The fusogenic uptake is validated by loading a lipophilic dye, 1,1&#39;-dioctadecyl-3,3,3&#39;,3&#39;-tetramethylindocarbocyanine perchlorate (DiI), into the fusogenic lipid bilayer and treating it to cells in vitro to observe for plasma membrane staining versus endocytic localizations. The targeting and in vivo gene silencing efficacies were previously quantified in a mouse model of Staphylococcus aureus pneumonia, in which the targeting peptide is expected to help the F-pSiNPs to home to the site of infection. Beyond its application in S. aureus infection, the F-pSiNP system may be used to deliver any oligonucleotide for gene therapy of a wide range of diseases, including viral infections, cancer, and autoimmune diseases.

We demonstrate the synthesis of fusogenic porous silicon nanoparticles for effective in vitro and in vivo oligonucleotide delivery. Porous silicon nanoparticles are loaded with siRNA to form the core, which is coated by fusogenic lipids through extrusion to form the shell. Targeting moiety functionalization and particle characterization are included.

用于寡核苷酸传递的可生多孔硅纳米粒子的合成、功能化和表征

With the advent of gene therapy, the development of an effective in vivo nucleotide-payload delivery system has become of parallel import. Fusogenic ...

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

We present microfabrication protocols for rendering intrinsically wetting materials repellent to liquids (omniphobic) by creating gas-entrapping microtextures (GEMs) on them comprising cavities and pillars with reentrant and doubly reentrant features. Specifically, we use SiO2/Si as the model system and share protocols for two-dimensional (2D) designing, photolithography, isotropic/anisotropic etching techniques, thermal oxide growth, piranha cleaning, and storage towards achieving those microtextures. Even though the conventional wisdom indicates that roughening intrinsically wetting surfaces (&#952;o &#60; 90&#176;) renders them even more wetting (&#952;r &#60; &#952;o &#60; 90&#176;), GEMs demonstrate liquid repellence despite the intrinsic wettability of the substrate. For instance, despite the intrinsic wettability of silica &#952;o &#8776; 40&#176; for the water/air system, and &#952;o &#8776; 20&#176; for the hexadecane/air system, GEMs comprising cavities entrap air robustly on immersion in those liquids, and the apparent contact angles for the droplets are &#952;r &#62; 90&#176;. The reentrant and doubly reentrant features in the GEMs stabilize the intruding liquid meniscus thereby trapping the liquid-solid-vapor system in metastable air-filled states (Cassie states) and delaying wetting transitions to the thermodynamically-stable fully-filled state (Wenzel state) by, for instance, hours to months. Similarly, SiO2/Si surfaces with arrays of reentrant and doubly reentrant micropillars demonstrate extremely high contact angles (&#952;r &#8776; 150&#176;&#8211;160&#176;) and low contact angle hysteresis for the probe liquids, thus characterized as superomniphobic. However, on immersion in the same liquids, those surfaces dramatically lose their superomniphobicity and get fully-filled within &#60;1 s. To address this challenge, we present protocols for hybrid designs that comprise arrays of doubly reentrant pillars surrounded by walls with doubly reentrant profiles. Indeed, hybrid microtextures entrap air on immersion in the probe liquids. To summarize, the protocols described here should enable the investigation of GEMs in the context of achieving omniphobicity without chemical coatings, such as perfluorocarbons, which might unlock the scope of inexpensive common materials for applications as omniphobic materials. Silica microtextures could also serve as templates for soft materials.

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

This work presents microfabrication protocols for achieving cavities and pillars with reentrant and doubly reentrant profiles on SiO2/Si wafers using photolithography and dry etching. Resulting microtextured surfaces demonstrate remarkable liquid repellence, characterized by robust long-term entrapment of air under wetting liquids, despite the intrinsic wettability of silica.

通过雕刻包含可重入和双重入的腔或柱的气体镶入微纹理来渲染 SiO2/Si 曲面全功能性

We present microfabrication protocols for rendering intrinsically wetting materials repellent to liquids (omniphobic) by creating gas-entrapping ...

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro- and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.g., GaAs) semiconductors without the need of sacrificial templates and lithographical steps. During this process, a reusable stamp coated with a noble metal catalyst is brought in contact with a Si wafer in the presence of a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture, which leads to the selective etching of Si at the metal-semiconductor contact interface. In this protocol, we discuss the stamp and substrate preparation methods applied in two Mac-Imprint configurations: (1) Porous Si Mac-Imprint with a solid catalyst; and (2) Solid Si Mac-Imprint with a porous catalyst. This process is high throughput and is capable of centimeter-scale parallel patterning with sub-20 nm resolution. It also provides low defect density and large area patterning in a single operation and bypasses the need for dry etching such as deep reactive ion etching (DRIE).

A protocol for metal-assisted chemical imprinting of 3D microscale features with sub-20 nm shape accuracy into solid and porous silicon wafers is presented.

金属辅助多孔硅和固体硅晶圆的电化学纳米压印

Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is ...

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of sophisticated microelectrodes with greater resolution and expanded capabilities. The progress in fabrication technology has supported the development of biomimetic electrodes, which aim to seamlessly integrate into the brain parenchyma, reduce the neuroinflammatory response observed after electrode insertion and improve the quality and longevity of electrophysiological recordings. Here we describe a protocol to employ a biomimetic approach recently classified as nano-architecture. The use of focused ion beam lithography (FIB) was utilized in this protocol to etch specific nano-architecture features into the surface of non-functional and functional single shank intracortical microelectrodes. Etching nano-architectures into the electrode surface indicated possible improvements of biocompatibility and functionality of the implanted device. One of the benefits of using FIB is the ability to etch on manufactured devices, as opposed to during the fabrication of the device, facilitating boundless possibilities to modify numerous medical devices post-manufacturing. The protocol presented herein can be optimized for various material types, nano-architecture features, and types of devices. Augmenting the surface of implanted medical devices can improve the device performance and integration into the tissue.

We have shown that the etching of nano-architecture into intracortical microelectrode devices may reduce the inflammatory response and has the potential to improve electrophysiological recordings. The methods described herein outline an approach to etch nano-architectures into the surface of non-functional and functional single shank silicon intracortical microelectrodes.

聚焦 Ion 光束平版印刷到蚀刻纳米架构到微电极

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of ...

光增强氢氟酸钝化:一个敏感的技术检测散装硅缺陷

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